Semiconductor device and method of measuring the same

ABSTRACT

A semiconductor device includes first and second contact parts that are disposed close to each other with an interval therebetween and form a screw hole (connection area) to which an external connection terminal is connected. The first contact part extends from a side of a case via a first linkage part that extends from the side, and the second contact part extends from the side via a second linkage part that extends from the side. The first and second linkage parts are disposed away from each other by at least a certain interval. In this way, the semiconductor device is allowed to have first and second semiconductor chips connected in parallel with each other and function as a semiconductor device. In addition, electrical characteristics of the first and second semiconductor chips of the semiconductor device are individually measured.

CROSS-REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of priority of theprior Japanese Patent Application No. 2015-183809, filed on Sep. 17,2015, the entire contents of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The embodiments discussed herein relate to a semiconductor device and amethod of measuring the same.

2. Background of the Related Art

There are semiconductor devices that include power semiconductor chipsand that are used as power conversion devices or switching devices. Forexample, there is a semiconductor device in which a semiconductor chipincluding an insulated gate bipolar transistor (IGBT) and asemiconductor chip including a metal-oxide-semiconductor field-effecttransistor (MOSFET) are connected in parallel with each other, and thissemiconductor device is able to function as a switching device (forexample, see Japanese Laid-open Patent Publication No. 04-354156).

Japanese Laid-open Patent Publication No. 04-354156 discusses asemiconductor device in which the emitter terminal of an IGBT and thesource terminal of a MOSFET are connected to the emitter terminal of thesemiconductor device at the same potential. In addition, the collectorterminal of the IGBT and the drain terminal of the MOSFET are connectedto an external collector terminal of the semiconductor device at thesame potential. With this configuration, when an input signal isinputted to the external collector terminal of the semiconductor device,the gate of the IGBT or the MOSFET is brought in an on- or off-state,and as a result, an output signal is obtained from the emitter terminalof the semiconductor device. Consequently, a low-loss switching functionis obtained.

In the semiconductor device discussed in Japanese Laid-open PatentPublication No. 04-354156, the semiconductor chips (IGBT, MOSFET) areconnected in parallel with each other with respect to the emitterterminal and the external collector terminal of the semiconductordevice. Thus, when characteristics such as a factory-default withstandvoltage and a leakage current are measured, a semiconductor chip havingthe lower characteristics (having the lower withstand voltage or thelarger leakage current) is measured. Namely, it is difficult to measurecharacteristics of the other semiconductor chip. In addition, when aforward voltage drop or the like is measured, since synthesizedcharacteristics of a plurality of semiconductor chips appear, it isdifficult to measure characteristics of an individual semiconductorchip. Thus, it is difficult to appropriately measure characteristics ofthe semiconductor device according to Japanese Laid-open PatentPublication No. 04-354156 after the semiconductor device is assembled.

To address this problem, external connection terminals that areelectrically connected to the collector terminal and the drain terminalof the respective semiconductor chips (IGBT and MOSFET) may be used, inplace of the external collector terminal of the semiconductor device. Inthis case, on the basis of an output signal obtained from the externalemitter terminal of the semiconductor device when an input signal isinputted to one of the external connection terminals, electricalcharacteristics of a corresponding semiconductor chip can be measured.

To assemble a semiconductor device as described above, the individualexternal connection terminals need to be connected electrically to thecollector terminal and the drain terminal of the respectivesemiconductor chips (IGBT, MOSFET). However, the connection of theseexternal connection terminals may complicate the connection around thesemiconductor device, which makes it difficult to achieve downsizing ofthe connection around the semiconductor device.

SUMMARY OF THE INVENTION

According to one aspect, there is provided a semiconductor deviceincluding: a first semiconductor chip and a second semiconductor chipthat are disposed on a metal plate; a first electrode terminal that iselectrically connected to a main electrode of the first semiconductorchip; and a second electrode terminal that is electrically connected toa main electrode of the second semiconductor chip, wherein the firstelectrode terminal includes a first contact part, and the secondelectrode terminal includes a second contact part, and wherein the firstcontact part and the second contact part are disposed close to eachother with an interval therebetween and form a connection area to whichan external connection terminal is connected.

The object and advantages of the invention will be realized and attainedby means of the elements and combinations particularly pointed out inthe claims.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and arenot restrictive of the invention.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1A and 1B illustrate a semiconductor device according to a firstembodiment;

FIGS. 2A and 2B illustrate measurement of electrical characteristics ofsemiconductor chips of the semiconductor device according to the firstembodiment;

FIGS. 3A and 3B illustrate circuit configurations of the semiconductordevice according to the first embodiment;

FIGS. 4A and 4B illustrate semiconductor devices as reference examples;

FIG. 5 illustrates electrode terminals of a semiconductor deviceaccording to a first variation of the first embodiment;

FIGS. 6A and 6B illustrate electrode terminals of a semiconductor deviceaccording to a second variation of the first embodiment;

FIGS. 7A and 7B illustrate measurement of electrical characteristics ofsemiconductor chips of the semiconductor device according to the secondvariation of the first embodiment;

FIGS. 8A to 8C illustrate electrode terminals of a semiconductor deviceaccording to a third variation of the first embodiment and measurementof electrical characteristics of semiconductor chips of thesemiconductor device;

FIGS. 9A to 9C illustrate a semiconductor device according to a secondembodiment;

FIGS. 10A and 10B illustrate a semiconductor device according to a thirdembodiment;

FIGS. 11A and 11B illustrate circuit configurations of the semiconductordevice according to the third embodiment;

FIG. 12 illustrates a semiconductor device according to a fourthembodiment; and

FIGS. 13A and 13B illustrate circuit configurations of the semiconductordevice according to the fourth embodiment.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, embodiments will be described below with reference to theaccompanying drawings, wherein like reference characters refer to likeelements throughout.

First Embodiment

First, a semiconductor device will be described with reference to FIGS.1A and 1B.

FIGS. 1A and 1B illustrate a semiconductor device 100 according to thefirst embodiment.

FIG. 1A is a top view of the semiconductor device 100, and FIG. 1B is asectional view taken along dashed line Y-Y in FIG. 1A.

In the semiconductor device 100, an aluminum insulating substrate 111, amulti-layer substrate 112 that is disposed on the aluminum insulatingsubstrate 111 and that includes an insulating plate 112 a and a metalplate 112 b, and semiconductor chips 115 and 116 that are disposed onthe metal plate 112 b via solder 114 are stacked. These elements areheld and sealed with sealing resin (not illustrated) in a case 119.

For example, each of the semiconductor chips 115 and 116 includes adiode, the back and front sides of each of the semiconductor chips 115and 116 are provided with cathode and anode electrodes, respectively.The metal plate 112 b is electrically connected to the cathodeelectrodes on the back sides of the semiconductor chips 115 and 116.

In addition, the case 119 is provided with an electrode terminal 120 (onthe right side in FIGS. 1A and 1B) and a first electrode terminal 130and a second electrode terminal 140 (on the left side in FIGS. 1A and1B). Each of the electrode terminal 120, the first electrode terminal130, and the second electrode terminal 140 is formed by a conductivemember.

The electrode terminal 120 includes an external connection part 121, aconduction part 123, and a wiring connection part 124.

The external connection part 121 extends from a side of the case 119 andhas a screw hole 122 to which an external connection terminal isconnected via a screw.

The conduction part 123 is electrically connected to the externalconnection part 121 and is incorporated in the case 119.

The wiring connection part 124 is electrically connected to theconduction part 123 and is disposed inside the case 119. In addition,the wiring connection part 124 is electrically connected to the metalplate 112 b of the multi-layer substrate 112 via bonding wires 117.

The first electrode terminal 130 includes a first external connectionpart 131, a first conduction part 133, and a first wiring connectionpart 134.

The first external connection part 131 extends from a side of the case119 and includes a first contact part 131 a and a first linkage part 131b.

For example, the first contact part 131 a is formed in the shape of anarc and is connected to the first linkage part 131 b.

The first linkage part 131 b is connected to the first contact part 131a and the first conduction part 133.

The first conduction part 133 is electrically connected to the firstexternal connection part 131 and is incorporated in the case 119.

The first wiring connection part 134 is electrically connected to thefirst conduction part 133 and is disposed inside the case 119. Inaddition, the first wiring connection part 134 is electrically connectedto the anode electrode of the first semiconductor chip 115 on the metalplate 112 b of the multi-layer substrate 112 via bonding wires 118.

In addition, the second electrode terminal 140 includes a secondexternal connection part 141, a second conduction part 143, and a secondwiring connection part 144.

The second external connection part 141 extends from the side of thecase 119 and includes a second contact part 141 a and a second linkagepart 141 b. The second external connection part 141 is disposed inparallel with the first external connection part 131.

For example, the second contact part 141 a is formed in the shape of anarc and is connected to the second linkage part 141 b.

The second linkage part 141 b is connected to the second contact part141 a and the second conduction part 143.

The second conduction part 143 is electrically connected to the secondexternal connection part 141 and is incorporated in the case 119.

The second wiring connection part 144 is electrically connected to thesecond conduction part 143 and is disposed inside the case 119. Inaddition, the second wiring connection part 144 is electricallyconnected to the anode electrode of the second semiconductor chip 116 onthe metal plate 112 b of the multi-layer substrate 112 via bonding wires118.

The first contact part 131 a of the first electrode terminal 130 and thesecond contact part 141 a of the second electrode terminal 140 aredisposed close to each other with an interval T1 therebetween and form ascrew hole 132 (connection area) to which an external connectionterminal is connected via a screw.

In addition, the first linkage part 131 b and the second linkage part141 b are disposed away from each other by at least a certain intervalT2. As will be described below, this is to prevent the first linkagepart 131 b and the second linkage part 141 b from electrically affectingeach other when measuring electrical characteristics of the firstsemiconductor chip 115 and the second semiconductor chip 116 by bringinga test electrode into contact with an individual one of the firstlinkage part 131 b and the second linkage part 141 b.

Next, measurement of electrical characteristics of the firstsemiconductor chip 115 and the second semiconductor chip 116 of thesemiconductor device 100 having the first electrode terminal 130 and thesecond electrode terminal 140 will be described with reference to FIGS.2A and 2B.

FIGS. 2A and 2B illustrate measurement of electrical characteristics ofthe semiconductor chips of the semiconductor device according to thefirst embodiment.

FIGS. 2A and 2B illustrate only some elements around the first electrodeterminal 130 and the second electrode terminal 140 of the semiconductordevice 100. The other elements are the same as those illustrated inFIGS. 1A and 1B. FIG. 2A is a side view of the external connection part141 of the semiconductor device 100 whose electrical characteristics aremeasured, and FIG. 2B is a top view of the external connection parts 131and 141 of the semiconductor device 100 whose electrical characteristicsare measured.

To measure electrical characteristics of the first semiconductor chip115 and the second semiconductor chip 116 of the semiconductor device100, first, an insulating separator 301 is inserted into the intervalbetween the first contact part 131 a of the first electrode terminal 130(the first external connection part 131) and the second contact part 141a of the second electrode terminal 140 (the second external connectionpart 141). In this way, the first electrode terminal 130 and the secondelectrode terminal 140 are electrically insulated from each other.

In addition, test electrodes 302 a and 302 b connected to an inputdevice (not illustrated) that inputs an input signal are brought intocontact with the first linkage part 131 b of the first electrodeterminal 130 (the first external connection part 131) and the secondlinkage part 141 b of the second electrode terminal 140 (the secondexternal connection part 141), respectively. The input device is able toinput an input signal to one or each of the test electrodes 302 a and302 b.

In addition, a detection device (not illustrated) is connected to theexternal connection part 121 of the electrode terminal 120 of thesemiconductor device 100. This detection device acquires output signalsoutputted from the first semiconductor chip 115 and the secondsemiconductor chip 116 via the electrode terminal 120 (the externalconnection part 121) and detects electrical characteristics.

When electrical characteristics of the first semiconductor chip 115 andthe second semiconductor chip 116 are measured in this way, since thefirst linkage part 131 b and the second linkage part 141 b are disposedaway from each other by at least the certain interval, the first linkagepart 131 b and the second linkage part 141 b, with which the testelectrodes 302 a and 302 b are brought into contact, do not electricallyaffect each other.

Next, a circuit configuration when the semiconductor device 100 iscaused to function will be described with reference to FIG. 3A. Inaddition, a circuit configuration when electrical characteristics of thefirst semiconductor chip 115 and the second semiconductor chip 116 ofthe semiconductor device 100 are measured will be described withreference to FIG. 3B.

FIGS. 3A and 3B illustrate circuit configurations of the semiconductordevice according to the first embodiment.

More specifically, FIG. 3A illustrates a circuit configuration when thesemiconductor device 100 is caused to function, and FIG. 3B illustratesa circuit configuration when electrical characteristics of the firstsemiconductor chip 115 and the second semiconductor chip 116 of thesemiconductor device 100 are measured.

By connecting the first semiconductor chip 115 and the secondsemiconductor chip 116 in parallel with each other, the semiconductordevice 100 is caused to function as a single device. In this case, anexternal connection terminal (input) is fixed in the screw hole 132formed by the first contact part 131 a of the first electrode terminal130 (the first external connection part 131) and the second contact part141 a of the second electrode terminal 140 (the second externalconnection part 141) with a screw, and the first contact part 131 a andthe second contact part 141 a are maintained at the same potential. Inaddition, similarly, an external connection terminal (output) is fixedin the screw hole 122 formed in the electrode terminal 120 (the externalconnection part 121) with a screw.

Next, an input signal is inputted from the external connection terminalto the first contact part 131 a of the first electrode terminal 130 (thefirst external connection part 131) and the second contact part 141 a ofthe second electrode terminal 140 (the second external connection part141). The inputted input signal is inputted to the anode electrodes ofthe first semiconductor chip 115 and the second semiconductor chip 116via the first conduction part 133 and the second conduction part 143,the first wiring connection part 134 and the second wiring connectionpart 144, and the bonding wires 118. Next, output signals from thecathode electrodes of the first semiconductor chip 115 and the secondsemiconductor chip 116 are outputted from the electrode terminal 120(the external connection part 121) to the outside via the metal plate112 b and the bonding wires 117 (see FIG. 3A).

When electrical characteristics of the first semiconductor chip 115 andthe second semiconductor chip 116 of the semiconductor device 100 aremeasured, as described above, the separator 301 is inserted into theinterval between the first contact part 131 a of the first electrodeterminal 130 (the first external connection part 131) and the secondcontact part 141 a of the second electrode terminal 140 (the secondexternal connection part 141). Next, the test electrodes 302 a and 302 bconnected to the input device (not illustrated) that inputs an inputsignal are brought into contact with the first linkage part 131 b of thefirst electrode terminal 130 (the first external connection part 131)and the second linkage part 141 b of the second electrode terminal 140(the second external connection part 141), respectively.

In this state, for example, when the input device inputs an input signalto the first external connection part 131 (the first linkage part 131 b)via the test electrode 302 b, the input signal is inputted to the anodeelectrode of the first semiconductor chip 115 via the first conductionpart 133 and the first wiring connection part 134 of the first electrodeterminal 130 and a corresponding bonding wire 118. Next, an outputsignal outputted from the cathode electrode of the first semiconductorchip 115 is outputted to the detection device via the metal plate 112 b,a corresponding bonding wire 117, and the electrode terminal 120 (theexternal connection part 121). In this way, electrical characteristicsof the first semiconductor chip 115 are measured (see FIG. 3B).

In contrast, when the input device inputs an input signal to the secondexternal connection part 141 (the second linkage part 141 b) via thetest electrode 302 a, the input signal is inputted to the anodeelectrode of the second semiconductor chip 116 via the second conductionpart 143 and the second wiring connection part 144 of the secondelectrode terminal 140 and a corresponding bonding wire 118. Next, anoutput signal outputted from the cathode electrode of the secondsemiconductor chip 116 is outputted to the detection device via themetal plate 112 b, a corresponding bonding wire 117, and the electrodeterminal 120 (the external connection part 121). In this way, electricalcharacteristics of the second semiconductor chip 116 are measured (seeFIG. 3B).

Next, semiconductor devices as reference examples that are compared withthe semiconductor device 100 will be described with reference to FIGS.4A and 4B.

FIGS. 4A and 4B illustrate semiconductor devices as reference examples.

In FIG. 4A, an input signal is inputted to two semiconductor chips via asingle electrode terminal, and in FIG. 4B, input signals are inputted totwo semiconductor chips via two electrode terminals, respectively.

As illustrated in FIG. 4A, a semiconductor device 100 a includes anelectrode terminal 120 (on the left side in FIG. 4), in place of thefirst electrode terminal 130 and the second electrode terminal 140 ofthe semiconductor device 100. Other elements are the same as those ofthe semiconductor device 100.

In this case, an input signal inputted from the electrode terminal 120(the external connection part 121) (on the left side in FIG. 4) isinputted to the anode electrodes of the first semiconductor chip 115 andthe second semiconductor chip 116 via the conduction part 123, thewiring connection part 124, and the bonding wires 118. Next, an outputsignal from the cathode electrodes of the first semiconductor chip 115and the second semiconductor chip 116 is outputted from the electrodeterminal 120 (the external connection part 121) (on the right side inFIG. 4) to the outside via the metal plate 112 b and the bonding wires117.

With this semiconductor device 100 a, since an input signal is inputtedfrom a single part to the first semiconductor chip 115 and the secondsemiconductor chip 116 connected in parallel with each other, electricalcharacteristics of the first semiconductor chip 115 and electricalcharacteristics of the second semiconductor chip 116 cannot individuallybe measured.

In contrast, as illustrated in FIG. 4B, a semiconductor device 100 bincludes electrode terminals 150 and 160, in place of the firstelectrode terminal 130 and the second electrode terminal 140 of thesemiconductor device 100. Other elements are the same as those of thesemiconductor device 100.

In this case, since an input signal is inputted via each of theelectrode terminals 150 and 160, electrical characteristics of the firstsemiconductor chip 115 and electrical characteristics of the secondsemiconductor chip 116 are individually measured.

However, with this semiconductor device 100 b, while electricalcharacteristics of the first semiconductor chip 115 and electricalcharacteristics of the second semiconductor chip 116 can individually bemeasured, to connect the first semiconductor chip 115 and the secondsemiconductor chip 116 in parallel with each other and to cause thesemiconductor device 100 b to function as a single device, the electrodeterminals 150 and 160 need to be connected. To connect the electrodeterminals 150 and 160, wiring therefor needs to be made. If complexwiring is needed, it is difficult to achieve downsizing of the wiringaround the semiconductor device 100 b.

Thus, the above semiconductor device 100 includes the multi-layersubstrate 112 that includes the insulating plate 112 a and the metalplate 112 b formed on the front side of the insulating plate 112 a, thefirst semiconductor chip 115 and the second semiconductor chip 116 thatare disposed on the metal plate 112 b, the case 119 that holds themulti-layer substrate 112, the first semiconductor chip 115, and thesecond semiconductor chip 116, the first electrode terminal 130 thatincludes the first contact part 131 a extending from a side of the case119 and that is electrically connected to a main electrode of the firstsemiconductor chip 115 inside the case 119, and the second electrodeterminal 140 that includes the second contact part 141 a extending fromthe side and that is electrically connected to a main electrode of thesecond semiconductor chip 116 inside the case 119.

With this semiconductor device 100, the first contact part 131 a and thesecond contact part 141 a are disposed close to each other with theinterval therebetween and form the screw hole 132 (connection area) towhich an external connection terminal is connected. In addition, withthis semiconductor device 100, the first contact part 131 a extends fromthe side via the first linkage part 131 b extending from the side, andthe second contact part 141 a extends from the side via the secondlinkage part 141 b extending from the side. The first linkage part 131 band the second linkage part 141 b are disposed away from each other byat least the certain interval.

In this way, without needing complex wiring, the semiconductor device100 is allowed to have the first semiconductor chip 115 and the secondsemiconductor chip 116 connected in parallel with each other andfunction as a single device. In addition, with this semiconductor device100, electrical characteristics of the first semiconductor chip 115 andelectrical characteristics of the second semiconductor chip 116 areindividually measured.

The semiconductor device 100 may have various modes by changing theshapes of the first external connection part 131 and the second externalconnection part 141.

First, a first variation as an example of one of the modes will bedescribed with reference to FIG. 5.

FIG. 5 illustrates electrode terminals of a semiconductor deviceaccording to a first variation of the first embodiment.

In FIG. 5, the semiconductor device 100 includes a first externalconnection part 231 and a second external connection part 241, in placeof the first external connection part 131 of the first electrodeterminal 130 and the second external connection part 141 of the secondelectrode terminal 140. FIG. 5 illustrates only the first externalconnection part 231, the second external connection part 241, and someelements therearound. Other elements are the same as those illustratedin FIGS. 1A and 1B.

The first external connection part 231 extends from a side of the case119 and includes a first contact part 231 a and a first linkage part 231b.

In addition, the second external connection part 241 extends from theside of the case 119 in parallel with the first external connection part231 and includes a second contact part 241 a and a second linkage part241 b.

These first contact part 231 a and the second contact part 241 a aredisposed close to each other with an interval T1 therebetween and form ascrew hole 232 (connection area) to which an external connectionterminal is connected with a screw, as described above.

In addition, the first linkage part 231 b and the second linkage part241 b are disposed away from each other by at least the certain intervalT2.

Even when the first external connection part 231 and the second externalconnection part 241 are used, electrical characteristics of the firstsemiconductor chip 115 and electrical characteristics of the secondsemiconductor chip 116 can individually be measured by using the methoddescribed with reference to FIGS. 2A and 2B.

Thus, the use of the first external connection part 231 and the secondexternal connection part 241 provides the same advantageous effects asthose provided by the use of the first external connection part 131 andthe second external connection part 141.

Next, a second variation will be described with reference to FIGS. 6Aand 6B.

FIGS. 6A and 6B illustrate electrode terminals of a semiconductor deviceaccording to a second variation of the first embodiment.

In FIGS. 6A and 6B, the semiconductor device 100 includes a firstexternal connection part 251 and a second external connection part 261,in place of the first external connection part 131 of the firstelectrode terminal 130 and the second external connection part 141 ofthe second electrode terminal 140 of the semiconductor device 100. FIGS.6A and 6B illustrate only the first external connection part 251, thesecond external connection part 261, and some elements therearound.Other elements are the same as those illustrated in FIGS. 1A and 1B.

More specifically, FIG. 6A is a top view of the first externalconnection part 251 and the second external connection part 261, andFIG. 6B is a side view of the first external connection part 251 and thesecond external connection part 261.

The first external connection part 251 extends from a side of the case119 and includes a first contact part 251 a and a first linkage part 251b.

The first contact part 251 a is formed in the shape of a ring and isconnected to the first linkage part 251 b.

In addition, the second external connection part 261 extends from theside of the case 119 in parallel with the first external connection part251 and includes a second contact part 261 a and a second linkage part261 b.

The second contact part 261 a is formed in the shape of a ring and isconnected to the second linkage part 261 b.

The first contact part 251 a of the first external connection part 251and the second contact part 261 a of the second external connection part261 overlap with each other with an interval T3 therebetween. Thepositions of the rings of the first contact part 251 a and the secondcontact part 261 a are adjusted to form a screw hole 252. In addition,the first linkage part 251 b of the first external connection part 251and the second linkage part 261 b of the second external connection part261 are disposed away from each other by at least a certain interval T2.

In this way, an external connection terminal is fixed with a screw inthe screw hole 252 formed by the first external connection part 251 andthe second external connection part 261.

Thus, the use of the first external connection part 251 and the secondexternal connection part 261 provides the same advantageous effects asthose provided by the use of the first external connection part 131 andthe second external connection part 141.

Next, measurement of electrical characteristics by using the firstexternal connection part 251 and the second external connection part 261will be described with reference to FIGS. 7A and 7B.

FIGS. 7A and 7B illustrate measurement of electrical characteristics ofsemiconductor chips of the semiconductor device according to the secondvariation of the first embodiment.

FIGS. 7A and 7B illustrate only the first external connection part 251,the second external connection part 261, and some elements therearound.Other elements are the same as those illustrated in FIGS. 1A and 1B.

More specifically, FIG. 7A is a top view of the first externalconnection part 251 and the second external connection part 261, andFIG. 7B is a side view of the first external connection part 251 and thesecond external connection part 261.

To measure electrical characteristics of the first semiconductor chip115 and the second semiconductor chip 116 of the semiconductor device100, first, the insulating separator 301 is inserted into the intervalbetween the first contact part 251 a of the first external connectionpart 251 and the second contact part 261 a of the second externalconnection part 261. In this way, the first external connection part 251and the second external connection part 261 are electrically insulated.

Next, the test electrodes 302 b and 302 a connected to the input device(not illustrated) that inputs an input signal are brought into contactwith the first linkage part 251 b of the first external connection part251 and the second linkage part 261 b of the second external connectionpart 261, respectively. The input device inputs an input signal to oneor each of the test electrodes 302 a and 302 b.

By bringing the test electrodes 302 a and 302 b into contact with thefirst linkage part 251 b and the second linkage part 261 b, as describedwith reference to FIGS. 2A and 2B, electrical characteristics of thefirst semiconductor chip 115 and electrical characteristics of thesecond semiconductor chip 116 are individually measured.

Next, a third variation will be described with reference to FIGS. 8A to8C.

FIGS. 8A to 8C illustrate electrode terminals of a semiconductor deviceaccording to a third variation of the first embodiment and measurementof electrical characteristics of semiconductor chips of thesemiconductor device.

In FIGS. 8A to 8C, the semiconductor device 100 includes a firstexternal connection part 271 and a second external connection part 281,in place of the first external connection part 131 of the firstelectrode terminal 130 and the second external connection part 141 ofthe second electrode terminal 140. FIGS. 8A to 8C illustrate only thefirst external connection part 271, the second external connection part281, and some elements therearound. Other elements are the same as thoseillustrated in FIGS. 1A and 1B.

More specifically, FIG. 8A is a top view of the first externalconnection part 271 and the second external connection part 281. FIG. 8Bis a side view of the first external connection part 271 and the secondexternal connection part 281 to which an external connection terminal isconnected. FIG. 8C is a top view of the first external connection part271 and the second external connection part 281 to which the externalconnection terminal is connected.

The first external connection part 271 extends from a side of the case119 and includes a first contact part 271 a and a first linkage part 271b.

The first contact part 271 a is formed in the shape of a plate and isconnected to the first linkage part 271 b.

In addition, the second external connection part 281 extends from theside of the case 119 in parallel with the first external connection part271 and includes a second contact part 281 a and a second linkage part281 b.

The second contact part 281 a is formed in the shape of a plate and isconnected to the second linkage part 281 b.

The first contact part 271 a of the first external connection part 271and the second contact part 281 a of the second external connection part281 are disposed close to each other and form a plate-like shape(connection area) with an interval T1 therebetween. In addition, thefirst linkage part 271 b of the first external connection part 271 andthe second linkage part 281 b of the second external connection part 281are disposed away from each other by at least a certain interval T2.

The first contact part 271 a of the first external connection part 271and the second contact part 281 a of the second external connection part281 are held by a clip-type external connection terminal 310, asillustrated in FIGS. 8B and 8C. In this way, the first contact part 271a and the second contact part 281 a are electrically connected to theexternal connection terminal 310.

To measure electrical characteristics by using the first externalconnection part 271 and the second external connection part 281, asdescribed with reference to FIGS. 2A and 2B, first, the insulatingseparator 301 is inserted into the interval T1 between the first contactpart 271 a of the first external connection part 271 and the secondcontact part 281 a of the second external connection part 281.

Next, the test electrodes 302 a and 302 b connected to an input device(not illustrated) that inputs an input signal are brought into contactwith the first linkage part 271 b of the first external connection part271 and the second linkage part 281 b of the second external connectionpart 281, respectively.

In this way, electrical characteristics of the first semiconductor chip115 and electrical characteristics of the second semiconductor chip 116are individually measured.

Second Embodiment

A semiconductor device according to a second embodiment will bedescribed with reference to FIGS. 9A to 9C.

FIGS. 9A to 9C illustrate a semiconductor device 400 according to thesecond embodiment.

More specifically, FIG. 9A is a top view of the semiconductor device400, and FIG. 9B is a sectional view taken along dashed line Y-Y in FIG.9A. FIG. 9C is a side view seen from direction X indicated by an arrowin FIG. 9A.

In the semiconductor device 400, an aluminum insulating substrate 111, amulti-layer substrate 112 that is disposed on the aluminum insulatingsubstrate 111 and that includes an insulating plate 112 a and a metalplate 112 b, and a first semiconductor chip 415 and a secondsemiconductor chip 416 that are disposed on the metal plate 112 b viasolder 114 are stacked. These elements are held and sealed with sealingresin (not illustrated) in a case 119.

For example, the first semiconductor chip 415 includes an IGBT, and thesecond semiconductor chip 416 includes a MOSFET. In this case, the firstsemiconductor chip 415 has a collector electrode on its back side and anemitter electrode and a gate electrode on its front side. The metalplate 112 b is electrically connected to the back-side collectorelectrode. In addition, the second semiconductor chip 416 has a drainelectrode on its back side and a source electrode and a gate electrodeon its front side. The metal plate 112 b is electrically connected tothe back-side drain electrode.

In addition, the case 119 is provided with an electrode terminal 420 (onthe right side in FIGS. 9A and 9B) and electrode terminals 430, a firstelectrode terminal 440, and a second electrode terminal 450 (on the leftside in FIGS. 9A and 9B). Each of the electrode terminals 420 and 430,the first electrode terminal 440, and the second electrode terminal 450is formed by a conductive member.

The electrode terminal 420 (on the right side in FIGS. 9A and 9B)includes an external connection part 421, a conduction part 423, and awiring connection part 424.

The external connection part 421 extends from a side of the case 119 andincludes a contact part 421 a and a linkage part 421 b.

The contact part 421 a extends vertically with respect to the linkagepart 421 b that extends horizontally from the side of the case 119. Aswill be described below, the contact part 421 a is fitted into a fittinghole (not illustrated) in a printed substrate 460 and is electricallyconnected to the printed substrate 460.

The linkage part 421 b extends from the side of the case 119 andelectrically connects the contact part 421 a and the conduction part423.

The conduction part 423 is electrically connected to the externalconnection part 421 and is incorporated in the case 119.

The wiring connection part 424 is electrically connected to theconduction part 423 and is disposed inside the case 119. In addition,the wiring connection part 424 is electrically connected to the metalplate 112 b of the multi-layer substrate 112 via bonding wires 117.

In addition, each of the electrode terminals 430 (on the left side inFIGS. 9A and 9B) includes an external connection part 431, a conductionpart 433, and a wiring connection part 434.

The external connection part 431 extends from a side of the case 119 andincludes a contact part 431 a and a linkage part 431 b.

The contact part 431 a extends vertically with respect to the linkagepart 431 b that extends horizontally from the side of the case 119. Aswill be described below, the contact part 431 a is fitted into a fittinghole 462 in the printed substrate 460 and is electrically connected tothe printed substrate 460.

The linkage part 431 b extends from the side of the case 119 andelectrically connects the contact part 431 a and the conduction part433.

The conduction part 433 is electrically connected to the externalconnection part 431 and is incorporated in the case 119.

The wiring connection part 434 is electrically connected to theconduction part 433 and is disposed inside the case 119. In addition,the wiring connection parts 434 are electrically connected to the gateelectrodes of the first semiconductor chip 415 and the secondsemiconductor chip 416 on the metal plate 112 b of the multi-layersubstrate 112 via bonding wires 118.

In addition, the first electrode terminal 440 includes a first externalconnection part 441, a first conduction part 443, and a first wiringconnection part 444.

The first external connection part 441 extends from the side of the case119 and includes a first contact part 441 a and a first linkage part 441b.

For example, the first contact part 441 a is connected to an end of thefirst linkage part 441 b and extends vertically.

The first linkage part 441 b is formed in the shape of an L asillustrated in FIG. 9B and electrically connects the first contact part441 a and the first conduction part 443.

The first conduction part 443 is electrically connected to the firstexternal connection part 441 and is incorporated in the case 119.

The first wiring connection part 444 is electrically connected to thefirst conduction part 443 and is disposed inside the case 119. Inaddition, the first wiring connection part 444 is electrically connectedto the emitter electrode of the first semiconductor chip 415 on themetal plate 112 b of the multi-layer substrate 112 via a bonding wire118.

In addition, the second electrode terminal 450 includes a secondexternal connection part 451, a second conduction part 453, and a secondwiring connection part 454.

The second external connection part 451 extends from the side of thecase 119 and includes a second contact part 451 a and a second linkagepart 451 b.

For example, the second contact part 451 a is connected to an end of thesecond linkage part 451 b and extends vertically.

The second linkage part 451 b is formed in the shape of an L asillustrated in FIG. 9B and is electrically connected to the secondcontact part 451 a and the second conduction part 453.

The second conduction part 453 is electrically connected to the secondexternal connection part 451 and is incorporated in the case 119.

The second wiring connection part 454 is electrically connected to thesecond conduction part 453 and is disposed inside the case 119. Inaddition, the second wiring connection part 454 is electricallyconnected to the source electrode of the second semiconductor chip 416on the metal plate 112 b of the multi-layer substrate 112 via a bondingwire 118.

The first contact part 441 a of the first electrode terminal 440 and thesecond contact part 451 a of the second electrode terminal 450 aredisposed close to each other with an interval T1 therebetween. Inaddition, the first linkage part 441 b and the second linkage part 451 bare disposed away from each other by at least a certain interval T2.

With this semiconductor device 400, the printed substrate 460 isattached to the contact part 421 a of the external connection part 421of the electrode terminal 420 (on the right side in FIGS. 9A and 9B),the contact parts 431 a of the external connection parts 431 of theelectrode terminals 430 (on the left side in FIGS. 9A and 9B), the firstcontact part 441 a of the first external connection part 441 of thefirst electrode terminal 440, and the second contact part 451 a of thesecond external connection part 451 of the second electrode terminal450.

More specifically, by fitting the contact part 421 a of the externalconnection part 421 of the electrode terminal 420 into the fitting hole(not illustrated) in the printed substrate 460, the electrode terminal420 is electrically connected to the printed substrate 460. In addition,by fitting the contact parts 431 a of the external connection parts 431of the electrode terminals 430 into the fitting holes 462 in the printedsubstrate 460, the electrode terminals 430 are electrically connected tothe printed substrate 460. In addition, by fitting the first contactpart 441 a of the first external connection part 441 of the firstelectrode terminal 440 and the second contact part 451 a of the secondexternal connection part 451 of the second electrode terminal 450 intofitting holes 461 in the printed substrate 460, the first electrodeterminal 440 and the second electrode terminal 450 are electricallyconnected to the printed substrate 460.

Thus, an input signal inputted from the external connection part 421 ofthe electrode terminal 420 is inputted to the collector electrode of thefirst semiconductor chip 415 and the drain electrode of the secondsemiconductor chip 416 via the conduction part 423, the wiringconnection part 424, the bonding wires 117, and the metal plate 112 b.Control signals inputted from the external connection parts 431 of theelectrode terminals 430 are inputted to the gate electrodes of the firstsemiconductor chip 415 and the second semiconductor chip 416 via theconduction parts 433, the wiring connection parts 434, and thecorresponding bonding wires 118. An output signal outputted from theemitter electrode of the first semiconductor chip 415 is outputted fromthe first external connection part 441 via the corresponding bondingwire 118, the first wiring connection part 444, and the first conductionpart 443. An output signal outputted from the source electrode of thesecond semiconductor chip 416 is outputted from the second externalconnection part 451 via the corresponding bonding wire 118, the secondwiring connection part 454, and the second conduction part 453. In thisway, the output signals outputted from the first external connectionpart 441 and the second external connection part 451 are outputted tothe printed substrate 460.

In addition, to measure electrical characteristics of the firstsemiconductor chip 415 and the second semiconductor chip 416 of thesemiconductor device 400, as described with reference to FIGS. 2A and2B, first, an insulating separator is inserted into the interval betweenthe first contact part 441 a and the second contact part 451 a.

Next, test electrodes connected to a detection device (not illustrated)that detects an output signal are brought into contact with the firstlinkage part 441 b of the first electrode terminal 440 (the firstexternal connection part 441) and the second linkage part 451 b of thesecond electrode terminal 450 (the second external connection part 451).

Next, an input device (not illustrated) that inputs an input signal isconnected to the external connection part 421 of the electrode terminal420 of the semiconductor device 400.

In this state, for example, when the input device inputs an input signalto the external connection part 421 (the contact part 421 a) of theelectrode terminal 420, the input signal travels along the conductionpart 423, the wiring connection part 424, the bonding wires 117, and themetal plate 112 b.

In this operation, if a control signal is inputted only to the gateelectrode of the first semiconductor chip 415, since the input signal isinputted to the collector electrode of the first semiconductor chip 415,the output signal outputted from the emitter electrode of the firstsemiconductor chip 415 is outputted to the first external connectionpart 441 (the first contact part 441 a) via the corresponding bondingwire 118, the first wiring connection part 444, and the first conductionpart 443. In this way, electrical characteristics of the firstsemiconductor chip 415 are measured.

If a control signal is inputted only to the gate electrode of the secondsemiconductor chip 416, since the input signal is inputted to the drainelectrode of the second semiconductor chip 416, the output signaloutputted from the source electrode of the second semiconductor chip 416is outputted from the second external connection part 451 (the secondcontact part 451 a) via the corresponding bonding wire 118, the secondwiring connection part 454, and the second conduction part 453. In thisway, electrical characteristics of the second semiconductor chip 416 aremeasured.

As described above, the semiconductor device 400 includes themulti-layer substrate 112 that includes the insulating plate 112 a andthe metal plate 112 b formed on the front side of the insulating plate112 a, the first semiconductor chip 415 and the second semiconductorchip 416 that are disposed on the metal plate 112 b, the case 119 thatholds the multi-layer substrate 112, the first semiconductor chip 415,and the second semiconductor chip 416, the first electrode terminal 440that includes the first contact part 441 a extending from a side of case119 and that is electrically connected to a main electrode of the firstsemiconductor chip 415 inside the case 119, and the second electrodeterminal 450 that includes the second contact part 451 a extending fromthe side and that is electrically connected to a main electrode of thesecond semiconductor chip 416 inside the case 119.

The first contact part 441 a and the second contact part 451 a of thesemiconductor device 400 are disposed close to each other with aninterval therebetween, and an external connection terminal is connectedto the first contact part 441 a and the second contact part 451 a. Inaddition, with this semiconductor device 400, the first contact part 441a extends from the side via the first linkage part 441 b extending fromthe side, and the second contact part 451 a extends from the side viathe second linkage part 451 b extending from the side. In addition, thefirst linkage part 441 b and the second linkage part 451 b are disposedaway from each other by at least a certain interval.

In this way, without needing complex wiring for the peripheral circuitsof the semiconductor device 400, the semiconductor device 400 is allowedto have the first semiconductor chip 415 and the second semiconductorchip 416 connected in parallel with each other and function as a powerconversion device, a switching device, etc. In addition, with thissemiconductor device 400, electrical characteristics of the firstsemiconductor chip 415 and electrical characteristics of the secondsemiconductor chip 416 can individually be measured.

In the second embodiment, the electrode terminal 120 according to thefirst embodiment (FIGS. 1A and 1B) may be used in place of the electrodeterminal 420 or 430. The first external connection part 131 and thesecond external connection part 141 may be used in place of the firstexternal connection part 441 and the second external connection part451, respectively. In this case, other than the first externalconnection part 131 and the second external connection part 141, thefirst external connection part 251 and the second external connectionpart 261 (FIGS. 6A and 6B) or the first external connection part 271 andthe second external connection part 281 (FIGS. 8A to 8C) may be used.

The bent part at the first contact part 441 a and the first linkage part441 b and the bent part at the second contact part 451 a and the secondlinkage part 451 b are used for positioning of the insertion depth oflead frames when the printed substrate is mounted. These bent parts alsoprevent solder from climbing up.

Third Embodiment

Next, a semiconductor device according to a third embodiment will bedescribed with reference to FIGS. 10A and 10B and FIGS. 11A and 11B.

FIGS. 10A and 10B illustrate a semiconductor device 500 according to thethird embodiment.

More specifically, FIG. 10A is a top view of the semiconductor device500, and FIG. 10B is a sectional view taken along dashed line Y-Y inFIG. 10A. The bonding wires illustrated in FIG. 10A are not illustratedin FIG. 10B.

FIGS. 11A and 11B illustrate circuit configurations of the semiconductordevice 500 according to the third embodiment.

FIG. 11A illustrates a circuit configuration when the semiconductordevice 500 functions as a single device, and FIG. 11B illustrates acircuit configuration when electrical characteristics of semiconductorchips of the semiconductor device 500 are measured.

The semiconductor device 500 includes an aluminum insulating substrate501, an insulating plate 502 disposed on the aluminum insulatingsubstrate 501, and metal plates 503 a to 503 d disposed on theinsulating plate 502. In addition, in the semiconductor device 500,semiconductor chips 511 to 513 are disposed on the front side of themetal plate 503 a, a semiconductor chip 514 on the front side of themetal plate 503 b, a semiconductor chip 515 on the front side of themetal plate 503 c, and a semiconductor chip 516 on the front side of themetal plate 503 d. These elements are held and sealed with sealing resin(not illustrated) in a case 505.

For example, the semiconductor chips 511 to 515 include MOSFETs anddiodes.

In addition, in the case 505 (on the left side in FIG. 10A), electroniccomponents 507, lead frames 508, and circuit wirings 506 thatelectrically connect the electronic components 507 and the lead frames508 are arranged. The electronic components 507 are electricallyconnected to the gate electrodes of the semiconductor chips 511 to 515via bonding wires so that control signals are inputted to thesemiconductor chips 511 to 515. The electronic components 507 are bootstrap diodes (BSDs) or integrated circuits (IC), for example.

In addition, ends of lead frames 521 to 524 and 525 a to 525 c arearranged inside the case 505 (on the right side in FIG. 10A). These leadframes extend to the outside of the case 505. As illustrated in FIG.10A, the lead frames 521 to 524 and 525 a to 525 c are electricallyconnected to the metal plates 503 a to 503 d or the semiconductor chips511 to 516 via bonding wires 504.

In particular, ends of the lead frames 525 a and 525 b are disposedclose to each other with an interval therebetween, and the other endsthereof are disposed away from each other by at least a certaininterval. Likewise, ends of the lead frames 525 b and 525 c are disposedclose to each other with an interval therebetween, and the other endsthereof are disposed away from each other by at least a certaininterval.

The lead frame 525 a is electrically connected to the source electrodeof the semiconductor chip 514. The lead frame 525 b is electricallyconnected to the source electrode of the semiconductor chip 515. Thelead frame 525 c is electrically connected to the source electrode ofthe semiconductor chip 516.

The lead frame 521 is electrically connected to the drain electrodes ofthe semiconductor chips 511 to 513.

The lead frame 522 is electrically connected to the source electrode ofthe semiconductor chip 511 and the drain electrode of the semiconductorchip 514.

The lead frame 523 is electrically connected to the source electrode ofthe semiconductor chip 512 and the drain electrode of the semiconductorchip 515.

The lead frame 524 is electrically connected to the source electrode ofthe semiconductor chip 513 and the drain electrode of the semiconductorchip 516.

In the case of the semiconductor device 500 configured in the above way,as in the first and second embodiments, by connecting a positive (P)terminal to the lead frame 521 and connecting negative (N1 to N3)terminals to the lead frames 525 a to 525 c to obtain the samepotential, the circuit configuration illustrated in FIG. 11A isobtained.

In contrast, by inserting insulating separators into the intervals wherethe ends of the lead frames 525 a to 525 c are disposed close to eachother and bringing test electrodes connected to a detection device intocontact with the other ends that are disposed away from each other by atleast the certain interval, for example, the circuit configurationillustrated in FIG. 11B is obtained. In this way, electricalcharacteristics of the series-connected semiconductor chips 511 and 514,electrical characteristics of the series-connected semiconductor chips512 and 515, and electrical characteristics of the series-connectedsemiconductor chips 513 and 516 can individually be measured.

The lead frames 508, 521 to 524, and 525 a to 525 c may be bent atdesired positions and be electrically connected to a printed substrateas in the second embodiment.

Fourth Embodiment

Next, a semiconductor device according to a fourth embodiment will bedescribed with reference to FIG. 12 and FIGS. 13A and 13B.

FIG. 12 illustrates a semiconductor device 500 a according to the fourthembodiment.

FIGS. 13A and 13B illustrate circuit configurations of the semiconductordevice 500 a according to the fourth embodiment.

FIG. 13A illustrates a circuit configuration when the semiconductordevice 500 a functions as a single device, and FIG. 13B illustrates acircuit configuration when electrical characteristics of semiconductorchips of the semiconductor device 500 a are measured.

As in the semiconductor device 500 according to the third embodiment,the semiconductor device 500 a includes an aluminum insulating substrate501, an insulating plate 502 disposed on the aluminum insulatingsubstrate 501, and metal plates 503 a to 503 d disposed on theinsulating plate 502. In addition, in the semiconductor device 500 a,semiconductor chips 511 to 513 are disposed on the front side of themetal plate 503 a, a semiconductor chip 514 on the front side of themetal plate 503 b, a semiconductor chip 515 on the front side of themetal plate 503 c, and a semiconductor chip 516 on the front side of themetal plate 503 d. These elements are held and sealed with sealing resin(not illustrated) in a case 505.

For example, the semiconductor chips 511 to 515 include MOSFETs anddiodes.

In addition, in the case 505 (on the left side n FIG. 12), electroniccomponents 507, lead frames 508, and circuit wirings 506 thatelectrically connect the electronic components 507 and the lead frames508 are arranged. The electronic components 507 are electricallyconnected to the gate electrodes of the semiconductor chips 511 to 515via bonding wires so that control signals are inputted to thesemiconductor chips 511 to 515. The electronic components 507 are bootstrap diodes (BSDs) or integrated circuits (IC), for example.

However, in the semiconductor device 500 a according to the fourthembodiment, ends of lead frames 521, 522 a, 522 b, 523 a, 523 b, 524 a,524 b, and 525 are arranged inside the case 505 (on the right side inFIG. 12). These lead frames extend to the outside of the case 505. Asillustrated in FIG. 12, the lead frames 521, 522 a, 522 b, 523 a, 523 b,524 a, 524 b, and 525 are electrically connected to the metal plates 503a to 503 d or the semiconductor chips 511 to 516 via bonding wires 504.

In particular, ends of the lead frames 522 a and 522 b are disposedclose to each other with an interval therebetween, and the other endsthereof are disposed away from each other by at least a certaininterval. In addition, the lead frame 522 a is electrically connected tothe source electrode of the semiconductor chip 511, and the lead frame522 b is electrically connected to the drain electrode of thesemiconductor chip 514.

In addition, ends of the lead frames 523 a and 523 b are disposed closeto each other with an interval therebetween, and the other ends thereofare disposed away from each other by at least a certain interval. Thelead frame 523 a is electrically connected to the source electrode ofthe semiconductor chip 512, and the lead frame 523 b is electricallyconnected to the drain electrode of the semiconductor chip 515.

In addition, ends of the lead frames 524 a and 524 b are disposed closeto each other with an interval therebetween, and the other ends thereofare disposed away from each other by at least a certain interval. Thelead frame 524 a is electrically connected to the source electrode ofthe semiconductor chip 513, and the lead frame 524 b is electricallyconnected to the drain electrode of the semiconductor chip 516.

The lead frame 521 is electrically connected to the drain electrodes ofthe semiconductor chips 511 to 513. In addition, the lead frame 525 iselectrically connected to the source electrodes of the semiconductorchips 514 to 516.

In this way, the semiconductor device 500 a forms the circuitconfiguration illustrated in FIG. 13B.

When this semiconductor device 500 a is used as a single device, thelead frames 522 a and 522 b, the lead frames 523 a and 523 b, and thelead frames 524 a and 524 b are combined together to have the samepotential. In this way, the circuit configuration illustrated in FIG.13A is obtained.

In contrast, for example, in FIG. 13B, a positive (P) terminal isconnected to the lead frame 521 and a negative (N) terminal (detectiondevice) is connected to the lead frame 525. In addition, an insulatingseparator is inserted into the interval where the ends of the leadframes 522 a and 522 b are disposed close to each other. In addition, atest electrode connected to a detection device is brought into contactwith the end of the lead frame 522 a that is disposed away from thecorresponding end of the lead frame 522 b by at least a certaininterval. In addition, a test electrode connected to an input device isbrought into contact with the end of the lead frames 522 b that isdisposed away from the end of the lead frame 522 a by at least a certaininterval. In this way, as in the first embodiment, electricalcharacteristics of the semiconductor chips 511 and 514 are measured. Inaddition, by bringing test electrodes into contact with the lead frames523 a, 523 b, 524 a, and 524 b in a like way, electrical characteristicsof the semiconductor chips 512, 513, 515, and 516 are measured.

As in the third embodiment, the lead frames 580, 521, 522 a, 522 b, 523a, 523 b, 524 a, 524 b, and 525 may be bent at desired positions and beelectrically connected to a printed substrate.

In the above embodiments, the lead frames are disposed in the case.However, the lead frames may directly be sealed with sealing resin,without using the case.

According to the present technique, wiring of a semiconductor device iseasily made so that the semiconductor device functions as a singledevice, and characteristics of an individual semiconductor chip of thesemiconductor device can be measured.

All examples and conditional language provided herein are intended forthe pedagogical purposes of aiding the reader in understanding theinvention and the concepts contributed by the inventor to further theart, and are not to be construed as limitations to such specificallyrecited examples and conditions, nor does the organization of suchexamples in the specification relate to a showing of the superiority andinferiority of the invention. Although one or more embodiments of thepresent invention have been described in detail, it should be understoodthat various changes, substitutions, and alterations could be madehereto without departing from the spirit and scope of the invention.

What is claimed is:
 1. A semiconductor device comprising: a firstsemiconductor chip and a second semiconductor chip that are disposed ona metal plate; a first electrode terminal that is electrically connectedto a main electrode of the first semiconductor chip; and a secondelectrode terminal that is electrically connected to a main electrode ofthe second semiconductor chip, wherein the first electrode terminalincludes a first contact part, and the second electrode terminalincludes a second contact part, and wherein the first contact part andthe second contact part are disposed close to each other with aninterval therebetween and form a connection area to which an externalconnection terminal is connected.
 2. The semiconductor device accordingto claim 1, further comprising: a multi-layer substrate including themetal plate and an insulating plate having a front side on which themetal plate is formed, wherein the multi-layer substrate, the firstsemiconductor chip, and the second semiconductor chip are held inside acase, wherein the first contact part and the second contact part extendfrom a side of the case, wherein the first electrode terminal iselectrically connected to the main electrode of the first semiconductorchip inside the case, and wherein the second electrode terminal iselectrically connected to the main electrode of the second semiconductorchip inside the case.
 3. The semiconductor device according to claim 2,wherein the first contact part extends from the side of the case via afirst linkage part that extends from the side of the case, wherein thesecond contact part extends from the side of the case via a secondlinkage part that extends from the side of the case, and wherein thefirst linkage part and the second linkage part are disposed apart fromeach other by at least a certain interval.
 4. The semiconductor deviceaccording to claim 1, wherein the first contact part and the secondcontact part are shaped to form a screw hole as the connection area. 5.The semiconductor device according to claim 3, wherein a first openingis formed in the first contact part, and a second opening is formed inthe second contact part, and wherein the first opening in the firstcontact part and the second opening in the second contact part overlapwith each other to form a screw hole as the connection area.
 6. Thesemiconductor device according to claim 1, wherein the firstsemiconductor chip and the second semiconductor chip are electricallyconnected in parallel with each other.
 7. A method of measuring asemiconductor device including a multi-layer substrate that includes aninsulating plate and a metal plate formed on a front side of theinsulating plate, a first semiconductor chip and a second semiconductorchip that are disposed on the metal plate, a case that holds themulti-layer substrate, the first semiconductor chip, and the secondsemiconductor chip, a first electrode terminal that includes a firstcontact part extending from a side of the case via a first linkage partextending from the side and that is electrically connected to a mainelectrode of the first semiconductor chip inside the case, and a secondelectrode terminal that includes a second contact part extending fromthe side via a second linkage part extending from the side and that iselectrically connected to a main electrode of the second semiconductorchip inside the case, the first contact part and the second contact partdisposed close to each other with an interval therebetween and forming aconnection area to which an external connection terminal is connectedand the first linkage part and the second linkage part disposed awayfrom each other by at least a certain interval, the method comprising:bringing test electrodes into contact with the first linkage part andthe second linkage part, respectively; inserting an insulating memberinto the interval between the first contact part and the second contactpart; and measuring electrical characteristics of the firstsemiconductor chip and the second semiconductor chip.
 8. A semiconductordevice comprising: a metal plate; a first semiconductor chip mounted onthe metal plate; a second semiconductor chip mounted on the metal plate;a first electrode terminal electrically connected to a first electrodeof the first semiconductor chip; and a second electrode terminalelectrically connected to a first electrode of the second semiconductorchip, the first and second electrode terminal are arranged adjacent toeach other and physically separated from each other and are positionedto define an opening having a geometric shape
 9. The semiconductordevice of claim 8, wherein the first electrode terminal includes a firstgroove defining a half of the geometric shape, the second electrodeterminal includes a second groove defining a half of the geometricshape, and the first electrode terminal and the second electrodeterminal area arranged such that the first groove faces the secondgroove to together define the geometric shape.
 10. The semiconductordevice of claim 9, wherein the geometric shape is a circle, and thefirst and second electrode terminals have symmetrical arc-shapessurrounding semi-circular shaped first and second grooves, respectively.11. The semiconductor device of claim 8, wherein the geometric shape isa circle, and the first and second electrode terminals have loop shapesdefining circle-shaped openings, the first electrode terminal beingpositioned above the second electrode terminal and physically separatedfrom the second electrode terminal, such that the circle-shaped openingof the first electrode terminal is aligned with the circle-shapedopening of the second electrode terminal.
 12. The semiconductor deviceof claim 8, further comprising a case encasing the metal plate and thefirst and second semiconductor chips, wherein each of the first andsecond electrode terminals includes a first portion located inside thecase, a second portion extending through a wall of the case, and a thirdportion outside the case, wherein the first portions of the first andsecond electrode terminals located inside the case are separated by afirst distance, and the third portions of the first and second electrodeterminals located outside the case are separated by a second distanceless than the first distance.
 13. The semiconductor device of claim 8,further comprising a third electrode terminal electrically connected toa second electrode of each of the first and second semiconductor chips.